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  ? semiconductor components industries, llc, 2011 november, 2011 ? rev. 6 1 publication order number: mmsd103t1/d mmsd103t1g, SMMSD103T1G high voltage switching diode features ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* maximum ratings rating symbol value unit continuous reverse voltage v r 250 v peak forward current i f 200 ma peak forward surge current i fm(surge) 625 ma thermal characteristics characteristic symbol value unit forward power dissipation, fr ? 5 board (note 1) @ t a = 25 ? c derate above 25 ? c p f 400 3.2 mw mw/ ? c thermal resistance, junction ? to ? case r jl 174 ? c/w thermal resistance, junction ? to ? ambient r ja 492 ? c/w junction and storage temperature range t j, t stg ? 55 to +150 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 0.75 0.062 in. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information 1 cathode 2 anode http://onsemi.com mmsd103t1g sod ? 123 (pb ? free) 3,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. sod ? 123 case 425 style 1 js = device code m = date code  = pb ? free package (note: microdot may be in either location) 1 js m   marking diagram SMMSD103T1G sod ? 123 (pb ? free) 3,000 / tape & reel
mmsd103t1g, SMMSD103T1G http://onsemi.com 2 electrical characteristics (t a = 25 ? c unless otherwise noted) characteristic symbol min max unit off characteristics reverse voltage leakage current (v r = 200 v) (v r = 200 v, t j = 150 ? c) i r ? ? 1.0 100 a reverse breakdown voltage (i br = 100 a) v (br) 250 ? v forward voltage (i f = 100 ma) (i f = 200 ma) v f ? ? 1000 1250 mv diode capacitance (v r = 0, f = 1.0 mhz) c d ? 5.0 pf reverse recovery time (i f = i r = 30 ma, r l = 100 ) t rr ? 50 ns notes: 1. a 2.0 k variable resistor adjusted for a forward current (i f ) of 30 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 30 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 0.1 f d.u.t. v r 100 h 0.1 f 50 output pulse generator 50 input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 3.0 ma output pulse (i f = i r = 30 ma; measured at i r(rec) = 3.0 ma) i f input signal figure 1. recovery time equivalent test circuit
mmsd103t1g, SMMSD103T1G http://onsemi.com 3 figure 2. forward voltage figure 3. reverse leakage 7000 reverse voltage (v) 5000 3000 5 0 2 1 6000 4000 6 5 10 20 50 100 200 1 2 3 4 300 t a = 150 ? c t a = 25 ? c t a = ? 55 ? c reverse current (na) forward current (ma) t a = ? 55 ? c 1 10 100 1000 1 200 400 600 800 1000 1200 forward voltage (mv) 150 ? c 25 ? c figure 4. diode capacitance v r , reverse voltage (v) 6 5 4 3 2 1 0 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 c d , diode capacitance (pf) 8 710 9 0.7 0.75
mmsd103t1g, SMMSD103T1G http://onsemi.com 4 package dimensions sod ? 123 case 425 ? 04 issue g notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. aaaa aaaa e b d a l c 1 2 a1 dim min nom max millimeters inches a 0.94 1.17 1.35 0.037 a1 0.00 0.05 0.10 0.000 b 0.51 0.61 0.71 0.020 c 1.60 0.15 0.055 d 1.40 1.80 e 2.54 2.69 2.84 0.100 --- 3.68 0.140 l 0.25 3.86 0.010 h e 0.046 0.002 0.024 0.063 0.106 0.145 0.053 0.004 0.028 0.071 0.112 0.152 min nom max 3.56 h e --- --- --- 0.006 --- --- --- --- *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 1: pin 1. cathode 2. anode 1.22 0.048  mm inches  scale 10:1  --- ---  00 10 10 ??? ? on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mmsd103t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative


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